STM32 內(nèi)部flash的讀寫(xiě)程序

/*BaseaddressoftheFlashsectors*/

#defineADDR_FLASH_SECTOR_0((uint32_t)0x08000000)/*Base@ofSector0,16Kbytes*/

#defineADDR_FLASH_SECTOR_1((uint32_t)0x08004000)/*Base@ofSector1,16Kbytes*/

#defineADDR_FLASH_SECTOR_2((uint32_t)0x08008000)/*Base@ofSector2,16Kbytes*/

#defineADDR_FLASH_SECTOR_3((uint32_t)0x0800C000)/*Base@ofSector3,16Kbytes*/

#defineADDR_FLASH_SECTOR_4((uint32_t)0x08010000)/*Base@ofSector4,64Kbytes*/

//stm32f205rbt6max128Kbyte

#defineADDR_FLASH_SECTOR_5((uint32_t)0x08020000)/*Base@ofSector5,128Kbytes*/

#defineADDR_FLASH_SECTOR_6((uint32_t)0x08040000)/*Base@ofSector6,128Kbytes*/

#defineADDR_FLASH_SECTOR_7((uint32_t)0x08060000)/*Base@ofSector7,128Kbytes*/

#defineADDR_FLASH_SECTOR_8((uint32_t)0x08080000)/*Base@ofSector8,128Kbytes*/

#defineADDR_FLASH_SECTOR_9((uint32_t)0x080A0000)/*Base@ofSector9,128Kbytes*/

#defineADDR_FLASH_SECTOR_10((uint32_t)0x080C0000)/*Base@ofSector10,128Kbytes*/

#defineADDR_FLASH_SECTOR_11((uint32_t)0x080E0000)/*Base@ofSector11,128Kbytes*/

staticuint32_tGetSector(uint32_tAddress)

{

uint32_tsector=0;

if((Address=ADDR_FLASH_SECTOR_0))

{

sector=FLASH_SECTOR_0;

}

elseif((Address=ADDR_FLASH_SECTOR_1))

{

sector=FLASH_SECTOR_1;

}

elseif((Address=ADDR_FLASH_SECTOR_2))

{

sector=FLASH_SECTOR_2;

}

elseif((Address=ADDR_FLASH_SECTOR_3))

{

sector=FLASH_SECTOR_3;

}

elseif((Address=ADDR_FLASH_SECTOR_4))

{

sector=FLASH_SECTOR_4;

}

elseif((Address=ADDR_FLASH_SECTOR_5))

{

sector=FLASH_SECTOR_5;

}

elseif((Address=ADDR_FLASH_SECTOR_6))

{

sector=FLASH_SECTOR_6;

}

elseif((Address=ADDR_FLASH_SECTOR_7))

{

sector=FLASH_SECTOR_7;

}

elseif((Address=ADDR_FLASH_SECTOR_8))

{

sector=FLASH_SECTOR_8;

}

elseif((Address=ADDR_FLASH_SECTOR_9))

{

sector=FLASH_SECTOR_9;

}

elseif((Address=ADDR_FLASH_SECTOR_10))

{

sector=FLASH_SECTOR_10;

}

else/*(Address=ADDR_FLASH_SECTOR_11)*/

{

sector=FLASH_SECTOR_11;

}

returnsector;

}

寫(xiě)函數(shù)！

/*Getthe1stsectortoerase*/

intwriteFlash(uint32_tstartAddr,uint32_tendAddr,uint32_t*data,uint32_tlen){

/*Privatemacro-------------------------------------------------------------*/

/*Privatevariables---------------------------------------------------------*/

uint32_tFirstSector=0,NbOfSectors=0,Address=0;

uint32_tSectorError;

/*VariableusedforEraseprocedure*/

FLASH_EraseInitTypeDefEraseInitStruct;

/*UnlocktheFlashtoenabletheflashcontrolregisteraccess*************/

HAL_FLASH_Unlock();

FirstSector=GetSector(startAddr);

/*Getthenumberofsectortoerasefrom1stsector*/

NbOfSectors=GetSector(endAddr)-FirstSector+1;

/*FillEraseInitstructure*/

EraseInitStruct.TypeErase=FLASH_TYPEERASE_SECTORS;

EraseInitStruct.VoltageRange=FLASH_VOLTAGE_RANGE_3;

EraseInitStruct.Sector=FirstSector;

EraseInitStruct.NbSectors=NbOfSectors;

if(HAL_FLASHEx_Erase(&EraseInitStruct,&SectorError)!=HAL_OK)

{

/*

Erroroccurredwhilesectorerase.

Usercanaddheresomecodetodealwiththiserror.

SectorErrorwillcontainthefaultysectorandthentoknowthecodeerroronthissector,

usercancallfunction'HAL_FLASH_GetError()'

*/

HAL_FLASH_Lock();

return-1;

}

/*ProgramtheuserFlashareawordbyword

(areadefinedbyFLASH_USER_START_ADDRandFLASH_USER_END_ADDR)***********/

Address=startAddr;

while(len--){

if(data==NULL)break;

if(HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD,Address,*data)==HAL_OK)

{

Address=Address+4;

}

else

{

HAL_FLASH_Lock();