ATMI公司與IBM公司達(dá)成新材合作研發(fā)協(xié)議
Danbury, Conn. — 2012年7月11日— ATMI, Inc. (NASDAQ-GS: ATMI) 今天宣布與IBM達(dá)成合作研發(fā)協(xié)議(JDA),這項(xiàng)協(xié)議旨在應(yīng)對(duì)14nm及更小技術(shù)節(jié)點(diǎn)的關(guān)鍵濕法工藝(wet process)挑戰(zhàn)。該協(xié)議將在未來兩年內(nèi),在前道和后道清洗所用的先進(jìn)化學(xué)產(chǎn)品上進(jìn)行廣泛的開發(fā)和商業(yè)化合作。
“這項(xiàng)與IBM的最新協(xié)議在兩家公司之間建立了多重的合作和努力。為解決下一代技術(shù)節(jié)點(diǎn)的挑戰(zhàn),這樣的合作模式對(duì)供應(yīng)商和關(guān)鍵客戶來說是至關(guān)重要的?!盇TMI微電子部門執(zhí)行副總裁兼總經(jīng)理Tod Higinbotham說,“將該協(xié)議的合作模式與我們的濕法工藝高效生產(chǎn)力發(fā)展能力相結(jié)合,意味著我們可以更快的發(fā)現(xiàn)并解決問題,保證我們的客戶將他們的資源集中于其它關(guān)鍵的挑戰(zhàn)上?!?/p>
“這項(xiàng)與ATMI的協(xié)議進(jìn)一步加強(qiáng)了IBM的合作發(fā)展戰(zhàn)略,以加快半導(dǎo)體14nm和10nm技術(shù)節(jié)點(diǎn)高質(zhì)量工藝和材料的解決方案的研發(fā)?!盜BM半導(dǎo)體工藝研發(fā)副總裁George Gomba說。
ATMI, Inc. (NASDAQ-GS: ATMI) today announced it has entered into a new Joint Development Agreement (JDA) with IBM that is focused on addressing critical wet process challenges at the14nm technology node and beyond. The agreement has a broad scope for developing and commercializing advanced chemical formulations for both Front End of Line (FEOL) and Back End of Line (BEOL) cleans applications over a two-year period.
“This latest agreement with IBM builds upon multiple joint efforts between our two companies to-date. It is confirmation of how critically important the collaboration model has become to both suppliers and our key customers when identifying solutions for the next nodes” stated Tod Higinbotham, ATMI Executive Vice President and General Manager, Microelectronics. “Combining the engagement model with our High Productivity Development capability for wet processes, means we can more quickly identify and resolve issues, allowing our customers to focus their resources on other critical challenges.”
"This engagement with ATMI further strengthens IBM's collaborative development strategy to enable and accelerate high quality process and material solutions for semiconductor products at the 14nm and 10nm nodes," said George Gomba, IBM VP of Semiconductor Process R&D.