意法半導(dǎo)體FD-SOI技術(shù)配備Memoir嵌入式存儲(chǔ)器

意法半導(dǎo)體FD-SOI技術(shù)配備Memoir嵌入式存儲(chǔ)器0' title='意法半導(dǎo)體FD-SOI技術(shù)配備Memoir嵌入式存儲(chǔ)器0' />

比較：體校晶體管和FD-SOI晶體管

元器件交易網(wǎng)訊 11月7日消息，據(jù)外媒 Electronicsweekly報(bào)道，Memoir Systems宣布已采用其算法內(nèi)存技術(shù)為意法半導(dǎo)體獨(dú)有的 FD-SOI（Fully Depleted Silicon-on-Insulator，全耗盡絕緣體上硅）技術(shù)，配備嵌入式存儲(chǔ)器。

意法半導(dǎo)體負(fù)責(zé)設(shè)計(jì)支持和服務(wù)的副總裁Philippe Magarshack說(shuō)：“就FD-SOI本身而言，F(xiàn)D-SOI配備了ASIC和SoC設(shè)計(jì)工具，從而實(shí)現(xiàn)最優(yōu)性能的同時(shí)確保溫度不超過(guò)安全限制。而且較傳統(tǒng)制造技術(shù)，F(xiàn)D-SOI技術(shù)可在大幅提升性能的同時(shí)大幅降低功耗，因此ST-Ericsson選擇采用意法半導(dǎo)體的FD-SOI技術(shù)設(shè)計(jì)未來(lái)的移動(dòng)平臺(tái)。“

Memoir Systems作為第三方知識(shí)產(chǎn)權(quán)進(jìn)一步表示：“我們正在讓FD-SOI更具吸引力，并演示其簡(jiǎn)單的移動(dòng)特點(diǎn)。“

意法半導(dǎo)體ST將是FD-SOI技術(shù)的第一個(gè)半導(dǎo)體供應(yīng)商。作為其獨(dú)有的FD-SOI技術(shù)為意法半導(dǎo)體制造28納米和20納米芯片。同時(shí)，F(xiàn)D-SOI是一種擴(kuò)展和簡(jiǎn)化現(xiàn)有平面、體硅制造方法的新技術(shù)。而FD-SOI晶體管相比同等采用傳統(tǒng)CMOS工藝的晶體管，擁有更高的制造過(guò)程工作頻率，這源于FD-SOI技術(shù)提高了晶體管的靜電特性、縮短了溝道長(zhǎng)度。

Memoir首席執(zhí)行官Sundar Iyer說(shuō)：“內(nèi)存技術(shù)的不斷突破縮短了設(shè)計(jì)時(shí)間，也提高了設(shè)計(jì)性能，這使我們的算法內(nèi)存技術(shù)有能力內(nèi)嵌入FD-SOI晶體管，這對(duì)于我們來(lái)說(shuō)是一種承諾，這對(duì)我們和我們的客戶(hù)都是很重要的。期待FD-SOI技術(shù)更高性能突破，以實(shí)現(xiàn)更低工作功耗和更低待機(jī)功耗。”(元器件交易網(wǎng)龍燕 譯)

外媒原文：

Memoir Systems provide embedded memory for FD-SOI ASICs

Memoir Systems has made its Algorithmic Memory Technology available for embedded memories in STMicroelectronics’ fully-depleted silicon-on-insulator (FD-SOI) Asics.

“On its own, FD-SOI produces ASICs and SoCs that run faster and cooler than devices built from alternative process technologies,” says ST evp Philippe Magarshack, “in adding third-party intellectual property from Memoir Systems, we are making FD-SOI more appealing and demonstrating how simple porting is.”

ST is the first semiconductor supplier to make FD-SOI available as a technology that extends and simplifies existing planar, bulk-silicon manufacturing approaches.

An FD-SOI transistor operates at higher frequencies than equivalent transistor manufactured using bulk CMOS because of improved transistor electrostatic characteristics and a shorter channel length.

“With our commitment to breakthrough memory technology, accelerated design times, and extreme high-performance, making our Algorithmic Memory Technology available on FD-SOI was important to us and our customers,” says Memoir CEO Sundar Iyer (pictured), “the ease of porting, together with the performance we’ve seen, confirms that FD-SOI is faster, cooler, and simpler.”